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PD-97191B
2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRHLG7670Z4 IRHLG7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.6 1.25 0.6 1.25 ID 1.07A -0.71A 1.07A -0.71A CHANNEL N P N P
MO-036AB
International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = 4.5V, TC= 25C ID@ VGS = 4.5V, TC=100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page
Pre-Irradiation
N-Channel
1.07 0.67 4.28 1.0 0.01 10 13 A 1.07 0.1 7.0 A -55 to 150
oC
P-Channel
-0.71 -0.45 -2.84 1.0
0.01
Units
A W
W/C
10 21 -0.71 0.1 -14
V mJ A mJ V/ns
300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical)
g
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1
04/01/08
IRHLG7670Z4, 2N7635M1
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Pre-Irradiation
Min
60 -- -- 1.0 -- 0.9 -- -- -- -- -- -- -- -- -- -- -- --
Electrical Characteristics For Each N-Channel Device @Tj = 25C (Unless Otherwise specified)
Typ Max Units
-- 0.08 -- -- -4.04 -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.6 2.0 -- -- 1.0 10 100 -100 2.5 0.5 1.6 6.0 2.4 34 11 -- V V/C V mV/C S A nA nC
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 0.67A VDS = VGS, ID = 250A VDS = 10V, IDS = 0.67A A VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.07A VDS = 30V VDD = 30V, ID = 1.07A, VGS = 5.0V, RG = 24 A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
162 39 2.1 13.8
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.07 4.28 1.2 51 70
Test Conditions
A
V ns nC Tj = 25C, IS = 1.07A, VGS = 0V A Tj = 25C, IF = 1.07A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 125
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
2
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Pre-Irradiation
IRHLG7670Z4, 2N7635M1
Electrical Characteristics For Each P-Channel Device @Tj = 25C (Unless Otherwise specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-60
Typ Max Units
-- -0.08 -- -- 3.07 -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 1.25 V V/C
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -0.45A VDS = VGS, ID = -250A VDS = -10V, IDS = -0.45A A VDS= -48V ,VGS= 0V VDS = -48V, VGS = 0V, TJ =125C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.71A VDS = -30V VDD = -30V, ID = -0.71A, VGS = -5.0V, RG = 24 A
BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -1.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.9 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
-2.0 V -- mV/C -- S -1.0 -10 A -100 100 2.8 1.7 0.8 17 20 27 23 -- nA nC
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
138 39 6.7 52.4
-- -- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -0.71 -2.84 -5.0 30 11
Test Conditions
A
V ns nC Tj = 25C, IS = -0.71A, VGS = 0V A Tj = 25C, IF = -0.71A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 125
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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3
IRHLG7670Z4, 2N7635M1
Radiation Characteristics Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036) Diode Forward Voltage
Up to 300K Rads (Si)1
Min
60 1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS= 48V, VGS= 0V VGS = 4.5V, ID = 0.67A VGS = 4.5V, ID = 0.67A VGS = 0V, ID = 1.07A
-- 2.0 100 -100 1.0 0.5 0.6 1.2
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET
(MeV/(mg/cm )) Br I Au 37 60 84
2
Energy
(MeV) 305 370 390
Range
(m) 39 34 30 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V 60 60 -
-7V 35 20 -
-8V 30 15 -
-10V 20 -
70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VGS
Br I Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
VDS
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Radiation Characteristics Pre-Irradiation
IRHLG7670Z4, 2N7635M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036) Diode Forward Voltage
Up to 300K Rads (Si)1
Min
-60 -1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = -250A VGS = VDS, ID = -250A VGS = -10V VGS = 10V VDS= -48V, VGS= 0V VGS = -4.5V, ID = -0.45A VGS = -4.5V, ID = -0.45A VGS = 0V, ID = -0.71A
-- -2.0 -100 100 -1.0 1.20 1.25 -5.0
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET
(MeV/(mg/cm )) Br I Au 37 60 84
2
Energy Range
(MeV) 305 370 390 (m) 39 34 30 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
6V -60 -60 -
7V -50 -20 -
8V -35 -
10V -25 -
-70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 VGS 6 7 8 9 10
Br I Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
5
IRHLG7670Z4, 2N7635M1 N-Channel Q1,Q3
10
Pre-Irradiation
10
VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1 2.5V
1
2.5V
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 1.07A
1.5
ID, Drain-to-Source Current (A)
T J = 150C
1 T J = 25C
(Normalized)
1.0
VDS = 25V 20s PULSE WIDTH 0.1 2 2.5 3 3.5 4 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
6
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Pre-Irradiation N-Channel Q1,Q3
RDS(on), Drain-to -Source On Resistance ( )
RDS(on), Drain-to -Source On Resistance ()
IRHLG7670Z4, 2N7635M1
2.5 ID = 1.07A 2.0
0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID , Drain Current (A) Vgs = 4.5V T J = 25C T J = 150C
1.5
1.0 T J = 150C 0.5 T J = 25C 0 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
70
1.5
1.0
60
ID = 50A
ID = 250A
0.5
ID = 1.0mA
ID = 150mA
50 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHLG7670Z4, 2N7635M1 N-Channel Q1,Q3
280 240 200 160 120 80 40 0 1 10 100 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd
Pre-Irradiation
12 ID = 1.07A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
10 8 6 4 2 0 0 0.5 1
VDS = 48V VDS = 30V VDS = 12V
C, Capacitance (pF)
Ciss Coss
Crss
FOR TEST CIRCUIT SEE FIGURE 17 1.5 2 2.5 3 3.5 4
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
10
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
1.2 1.0
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
1 T J = 150C
T J = 25C
0.8 0.6 0.4 0.2
0.1
VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 11. Typical Source-to-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
8
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Pre-Irradiation N-Channel Q1,Q3
10
32
IRHLG7670Z4, 2N7635M1
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA LIMITED BY R DS(on)
28 24 20 16 12 8 4 0
ID, Drain-to-Source Current (A)
TOP BOTTOM
ID 0.48A 0.68A 1.07A
1
1ms Tc = 25C Tj = 150C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V)
10ms 100
0.1
25
50
75
100
125
150
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
1000
Thermal Response ( Z thJA )
100
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
10
1
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
IRHLG7670Z4, 2N7635M1
N-Channel Q1,Q3
Pre-Irradiation
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
. D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 16a. Unclamped Inductive Test Circuit
4.5V
QG
12V .2F
50K .3F
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
Fig 17a. Basic Gate Charge Waveform VDS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
IG
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
VDS 90%
RD
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
10
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Pre-Irradiation P-Channel Q2,Q4
10
-I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A)
VGS TOP -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V
IRHLG7670Z4, 2N7635M1
10
VGS -10V -5.0V -4.5V -3.0V -2.75V -2.5V -2.25V BOTTOM -2..0V TOP
1
1 -2.0V 20s PULSE WIDTH Tj = 150C 0.1
-2.0V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
10
2.0
T J = 25C
RDS(on) , Drain-to-Source On Resistance
ID = -0.71A
-I D, Drain-to-Source Current (A)
1.5
T J = 150C 1
(Normalized)
1.0
VDS = -25V 20s PULSE WIDTH 0.1 2 2.5 3 3.5 -V GS, Gate-to-Source Voltage (V)
VGS = -4.5V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 21. Typical Transfer Characteristics
Fig 22. Normalized On-Resistance Vs. Temperature
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11
IRHLG7670Z4, 2N7635M1 P-Channel Q2,Q4
RDS(on), Drain-to -Source On Resistance ()
Pre-Irradiation
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2 3 4 5 6 7 8
ID = -0.71A
RDS(on), Drain-to -Source On Resistance ( )
4.0
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 -I D, Drain Current (A) T J = 25C T J = 150C
T J = 150C
T J = 25C
Vgs = -4.5V
9
10 11 12
-V GS, Gate -to -Source Voltage (V)
Fig 23. Typical On-Resistance Vs Gate Voltage
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 24. Typical On-Resistance Vs Drain Current
75
3.0
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
70
2.5
2.0
65
1.5
1.0
60
ID = -50A ID = -250A
0.5
ID = -1.0mA ID = -150mA
-60 -40 -20 0 20 40 60 80 100 120 140 160
55 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
T J , Temperature ( C )
T J , Temperature ( C )
Fig 25. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 26. Typical Threshold Voltage Vs Temperature
12
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Pre-Irradiation P-Channel Q2,Q4
240 VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = C ds + Cgd
IRHLG7670Z4, 2N7635M1
12 ID = -0.71A
-V GS, Gate-to-Source Voltage (V)
200
10 8 6 4 2 0 0 1 2
VDS= -48V VDS= -30V VDS= -12V
C, Capacitance (pF)
160
Ciss
120
80
Coss
40
C rss
0 1 10 100
FOR TEST CIRCUIT SEE FIGURE 35 3 4 5 6
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 27. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 28. Typical Gate Charge Vs. Gate-to-Source Voltage
10
0.8 0.7
-I SD, Reverse Drain Current (A)
1
-I D, Drain Current (A)
3.5 4
T J = 150C
0.6 0.5 0.4 0.3 0.2 0.1 0
T J = 25C
0.1
VGS = 0V 0.01 0 0.5 1 1.5 2 2.5 3 -V SD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
T C , Case Temperature (C)
Fig 29. Typical Source-Drain Diode Forward Voltage
Fig 30. Maximum Drain Current Vs. Case Temperature
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13
IRHLG7670Z4, 2N7635M1 P-Channel Q2,Q4
10
50
Pre-Irradiation
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TOP
40
BOTTOM
30
ID -0.32A -0.45A -0.71A
1 1ms 0.1 10ms Tc = 25C Tj = 150C Single Pulse 1 10 -VDS , Drain-to-Source Voltage (V) 100
20
10
0.01
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 31. Maximum Safe Operating Area
Fig 32. Maximum Avalanche Energy Vs. Drain Current
1000
Thermal Response ( Z thJA )
100
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
10
1
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 33. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
14
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Pre-Irradiation P-Channel Q2,Q4
VDS
L
IRHLG7670Z4, 2N7635M1
I AS
VDD A
RG
D.U.T.
IAS
-20V VGS
DRIVER
0.01
tp
tp
15V
V(BR)DSS
Fig 34a. Unclamped Inductive Test Circuit
Fig 34b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
-4.5V
QG
12V .2F
50K .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 35a. Basic Gate Charge Waveform
RD V DS VGS
Fig 35b. Gate Charge Test Circuit
td(on)
tr
t d(off)
VGS
D.U.T. V DD
10%
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 36a. Switching Time Test Circuit
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+
-
RG
90% VDS
Fig 36b. Switching Time Waveforms
+
D.U.T.
-
QGS
QGD
VDS
tf
15
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 22.5mH, Peak IL = 1.07A, VGS = 10V A ISD 1.07A, di/dt 214A/s, VDD 60V, TJ 150C A Pulse width 300 s; Duty Cycle 2% 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A VDD = -25V, starting TJ = 25C, L= 85mH, Peak IL = -0.71A, VGS = -10V ISD -0.71A, di/dt -164A/s, VDD -60V, TJ 150C
Case Outline and Dimensions -- MO-036AB
Q4 Q1
Q3 Q2
Q4 Q1
Q3 Q2
CHANNELS N Ch.- Q1, Q3 P Ch.- Q2, Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2008
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